Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-08-08
2010-11-23
Vu, Hung (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000
Reexamination Certificate
active
07838347
ABSTRACT:
According to one feature of the present invention, a display device is manufactured according to the steps of forming a semiconductor layer; forming a gate insulating layer over the semiconductor layer; forming a gate electrode layer over the gate insulating layer; forming source and drain electrode layers in contact with the semiconductor layer; forming a first electrode layer electrically connected to the source or drain electrode layer; forming an inorganic insulating layer over part of the first electrode layer, the gate electrode layer, the source electrode layer, and the drain electrode layer; subjecting the inorganic insulating layer and the first electrode layer to plasma treatment; forming an electroluminescent layer over the inorganic insulating layer and the first electrode layer which are subjected to plasma treatment; and forming a second electrode layer over the electroluminescent layer.
REFERENCES:
patent: 5684365 (1997-11-01), Tang et al.
patent: 6521912 (2003-02-01), Sakama et al.
patent: 6781162 (2004-08-01), Yamazaki et al.
patent: 6818852 (2004-11-01), Ohmi et al.
patent: 6919282 (2005-07-01), Sakama et al.
patent: 7303996 (2007-12-01), Wang et al.
patent: 7364954 (2008-04-01), Kuwashima et al.
patent: 2002/0020497 (2002-02-01), Ohmi et al.
patent: 2002/0132383 (2002-09-01), Hiroki et al.
patent: 2003/0137325 (2003-07-01), Yamazaki et al.
patent: 2004/0007748 (2004-01-01), Sakama et al.
patent: 2004/0043638 (2004-03-01), Nansei et al.
patent: 2004/0050494 (2004-03-01), Ohmi et al.
patent: 2004/0217431 (2004-11-01), Shimada
patent: 2004/0246432 (2004-12-01), Tsuchiya et al.
patent: 2005/0005854 (2005-01-01), Suzuki
patent: 2005/0012105 (2005-01-01), Yamazaki et al.
patent: 2005/0263835 (2005-12-01), Sakama et al.
patent: 2006/0244063 (2006-11-01), Isobe et al.
patent: 2006/0246633 (2006-11-01), Arai et al.
patent: 2006/0246644 (2006-11-01), Isobe et al.
patent: 2006/0246738 (2006-11-01), Isobe et al.
patent: 2006/0270066 (2006-11-01), Imahayashi et al.
patent: 2006/0275710 (2006-12-01), Yamazaki et al.
patent: 1604278 (2005-04-01), None
patent: 0 717 446 (1996-06-01), None
patent: 1 331 666 (2003-07-01), None
patent: 1 617 483 (2006-01-01), None
patent: 1 622 194 (2006-02-01), None
patent: 08-234683 (1996-09-01), None
patent: 2001-135824 (2001-05-01), None
patent: 2003-288994 (2003-10-01), None
patent: 2004-087321 (2004-03-01), None
patent: 2004-319952 (2004-11-01), None
patent: WO 2004-017396 (2004-02-01), None
patent: WO 2005-004223 (2005-01-01), None
Nikkei Microdevices, Report [LSI] “The Advancing Introduction of Plasma Oxynitriding Apparatus Adopted by More Than 10 LSI Makers,” pp. 100-103, Apr. 1, 2005.
Office Action (Application No. 200610110958.1) dated Apr. 24, 2009.
Office Action (Application No. 200610110958.1) dated Sep. 26, 2008.
Suzawa Hideomi
Yamazaki Shunpei
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Vu Hung
LandOfFree
Display device and manufacturing method of display device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Display device and manufacturing method of display device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Display device and manufacturing method of display device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4252113