Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2001-11-30
2004-10-19
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S343000
Reexamination Certificate
active
06806496
ABSTRACT:
TECHNICAL FIELD
The present invention relates to a display device and a manufacturing method therefor and, more particularly, to a device for performing desired display by using an electrophoretic ink, and a manufacturing method therefor.
BACKGROUND ART
Display devices driven by semiconductor elements have been manufactured by utilizing advanced equipment, such as a high vacuum apparatus.
However, utilizing such advanced equipment poses a problem of high manufacturing cost for the display devices driven by the semiconductor elements.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a display device that can be manufactured at lower cost, and a manufacturing method for the same.
A display device in accordance with the present invention includes a pixel electrode and a transistor for applying a voltage to the pixel electrode,
wherein at least an active layer of the transistor is formed of an organic material.
Furthermore, a manufacturing method for the display device in accordance with the present invention includes a step for providing a source line around a pixel electrode provided on a substrate, a step for forming an insulating film pattern having an opening of a region for a source and a drain, a step for forming the source and the drain, a step for providing a semiconductor film on the source and the drain, and a step for providing a gate on the semiconductor film, the respective steps being implemented substantially under atmospheric pressure.
REFERENCES:
patent: 5917199 (1999-06-01), Byun et al.
Pham Long
Trinh Hoa B.
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