Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-08-28
2007-08-28
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S059000, C257S072000
Reexamination Certificate
active
11091442
ABSTRACT:
A display device includes an insulating substrate, a thin-film transistor arranged on the insulating substrate, a pixel electrode including a transparent electrode, and an aluminum alloy film as a connection wiring section for electrically connecting between the thin-film transistor and the pixel electrode. The aluminum alloy film is a multilayer aluminum alloy film including an aluminum alloy layer containing no nitrogen, and another aluminum alloy layer being arranged on the first layer and containing nitrogen. The nitrogen-containing layer ensures corrosion resistance against an alkaline solution. The nitrogen-containing aluminum alloy layer has been removed at least in a connection area with the pixel electrode so as to allow the pixel electrode to be directly connected to the first aluminum alloy layer.
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Gotoh Hiroshi
Kugimiya Toshihiro
Tomihisa Katsufumi
(Kobe Steel, Ltd.)
Ho Anthony
Jackson Jerome
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