Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-08-02
2011-08-02
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE31130, C349S038000, C349S143000
Reexamination Certificate
active
07989813
ABSTRACT:
A display apparatus includes a substrate; a first insulating layer formed on the substrate and having an upper surface including a concavo-convex area including one or more concave features and one or more convex features; a first storage electrode overlaying the upper surface and a side surface of the first insulating layer and having an upper surface including a concavo-convex area including one or more concave features and one or more convex features, each concave feature of the first storage electrode overlying at least one respective concave feature of the first insulating layer, each convex feature of the first storage electrode overlying at least one respective convex feature of the first insulating layer; a second insulating layer formed on the first storage electrode; and a second storage electrode formed on the second insulating layer which separates the second storage electrode from the underlying first storage electrode.
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Bae Ju-Han
Jeon Hyung-Il
Kim Kyu-Young
Park Dae-Jin
Budd Paul A
Innovation Counsel LLP
Jackson, Jr. Jerome
Samsung Electronics Co,. Ltd.
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