Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-07-19
2011-07-19
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
07982223
ABSTRACT:
In a display apparatus and a method of manufacturing the display apparatus, a first insulating layer having a trench and a second insulating layer having a via hole corresponding to the trench are formed on an array substrate. After forming a seed layer in the trench, a conductive layer is formed on the seed layer through a plating process, thereby forming the gate line, the gate electrode and the storage line accommodated in the trench and the via hole.
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patent: 2007/0096097 (2007-05-01), Kim et al.
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patent: 2007043131 (2007-02-01), None
Chin Hong-Kee
Choi Seung-Ha
Jeong Yu-Gwang
Kim Sang-Gab
Oh Min-Seok
Cantor & Colburn LLP
Samsung Electronics Co,. Ltd.
Vu Hung
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