Display apparatus and fabrication process thereof

Details Display apparatus and fabrication process thereof Display apparatus and fabrication process thereof

1997-06-02

2000-08-01

Font, Frank G.

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

G02F 1136

Patent

active

060974532

ABSTRACT:
In an active matrix type liquid-crystal display apparatus using polycrystal silicon as semiconductor devices of switching elements, leakage current of the switching elements is prevented, large driving current is achieved, and rise characteristics of current in the sub-threshold region are improved, thereby realizing high-pixel-number and high-definition image display.
For this, a surface of an insulating layer of silicon nitride film 102 is oxidized to form an insulating layer of silicon oxide film 111 surface roughness of which is 2 nm or less, and a polycrystal silicon layer is formed thereon to form TFTs.

REFERENCES:
patent: 5644370 (1997-07-01), Miyawaki et al.
patent: 5721596 (1998-02-01), Kochi
patent: 5844647 (1998-12-01), Maruno et al.
Patent Abstracts of Japan, vol. 017, No. 356 (E-1394) Jul. 6, 1993.
Patent Abstracts of Japan, vol. 018, No. 419 (E-1589) Aug. 5, 1994.

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