Dislocation-free epitaxial layer on a lattice-mismatched porous

Details Dislocation-free epitaxial layer on a lattice-mismatched porous Dislocation-free epitaxial layer on a lattice-mismatched porous

1988-04-25

1989-02-21

Carroll, J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

357 52, 357 55, 357 56, 357 88, 156610, 156603, 156DIG67, 437 84, 437131, H01L 29161, H01L 2906, H01L 2934

Patent

active

048069965

ABSTRACT:
Dislocation-free epitaxial layers on the surfaces of lattice mismatched single crystal substrates, such as germanium or gallium arsenide on silicon, can be grown provided the surfaces are suitably patterned, such as castellated or porous.

REFERENCES:
patent: 3966513 (1976-06-01), Hallais et al.
patent: 3970958 (1976-07-01), Streifer et al.
patent: 4028149 (1977-06-01), Deines et al.
patent: 4178197 (1979-12-01), Marinau
patent: 4233613 (1980-11-01), Morimoto
patent: 4598164 (1986-07-01), Tiedje et al.
patent: 4707216 (1987-11-01), Murkoc et al.
Stinson, "Gallium Arsenide Deposition Improved", p. 33, Chemical and Engineering News (24 Feb. 1986).
Appl. Phys. Lett., 41(1), 1 Jul. 1982, "A New Silicon-on-Insulator Structure Using a Silicon Molecular Beam Epitaxial Growth on Porous Silicon", by S. Konaka et al, pp. 86-88.

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