Dislocation-free epitaxial growth in radio-frequency heating rea

Details Dislocation-free epitaxial growth in radio-frequency heating rea Dislocation-free epitaxial growth in radio-frequency heating rea

1986-12-05

1988-10-25

Pal, Asok

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156612, 156613, 156DIG64, 156DIG93, 118725, 118728, 118500, 118503, 148175, 427 86, 427255, 4272481, H01L 21205

Patent

active

047801743

ABSTRACT:
A method is described for solving the long-standing problem of the generation of slip lines and dislocations during epitaxial deposition onto monocrystalline substrates, chiefly silicon, in a radio-frequency heating reactor. The method involves inserting a pad wafer, which is of the same material and dimension as the substrate, into a flat-bottom recess and over a coaxial flat-bottom depression when on the upper side of the susceptor which allows uniform heating of the monocrystalline substrate. By proper adjustment of the depth thereby eliminating diameter of recess and depression respectively, the occurrence of a radial temperature gradient in the heated substrate can be minimized, and the slip line and the dislocation in the epitaxial deposited wafers up to given maximum dimensions.

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"Slip in Silicon Epitaxy", Bloem et al., J. Appl. Phys., vol. 43, 1972, pp. 1281-1283.
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