Dishing resistance

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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438692, 438702, H01L 21302

Patent

active

059289597

ABSTRACT:
Fabrication of devices that produces a surface with reduced dishing caused by polishing. The reduced dishing is the result of forming a first layer that partially covers a complex surface topography and a second layer the covers the surface topography. The second layer being more resistant to polishing than the first so as to reduce dishing in the wide spaces of the complex topography.

REFERENCES:
patent: 5356513 (1994-10-01), Burke et al.
patent: 5516729 (1996-05-01), Dawson et al.

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