Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-09-30
1999-07-27
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438692, 438702, H01L 21302
Patent
active
059289597
ABSTRACT:
Fabrication of devices that produces a surface with reduced dishing caused by polishing. The reduced dishing is the result of forming a first layer that partially covers a complex surface topography and a second layer the covers the surface topography. The second layer being more resistant to polishing than the first so as to reduce dishing in the wide spaces of the complex topography.
REFERENCES:
patent: 5356513 (1994-10-01), Burke et al.
patent: 5516729 (1996-05-01), Dawson et al.
Huckels Kai
Ilg Matthias
Braden Stanton C.
Chen Kin-Chan
Siemens Aktiengesellschaft
Utech Benjamin
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