Discretionary gettering of semiconductor circuits

Details Discretionary gettering of semiconductor circuits Discretionary gettering of semiconductor circuits

1992-01-17

1993-10-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 12, 437 24, 437160, 156612, 156613, H01L 21205

Patent

active

052504450

ABSTRACT:
A semiconductor wafer (32) is patterned to have gettering areas (36-38) selectively positioned proximate devices (44-46) which require gettering. The areas (36-38) comprise germanium-doped silicon having a germanium concentration of approximately 1.5%-2.0%. The germanium creates a lattice mismatch between the substrate (32) and an epitaxial layer (34) which is sufficient to produce defects capable of gettering contaminants. The gettering areas (36-38) may be formed by selective deposition, selective etching, ion-implantation or selective diffusion techniques.

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