Discrete trap non-volatile multi-functional memory device

Details Discrete trap non-volatile multi-functional memory device Discrete trap non-volatile multi-functional memory device

2005-08-11

2008-10-14

Baumeister, Bradley W. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29129

Reexamination Certificate

active

07436018

ABSTRACT:
A multiple layer tunnel insulator is fabricated between a substrate and a discrete trap layer. The properties of the multiple layers determines the volatility of the memory device. The composition of each layer and/or the quantity of layers is adjusted to fabricate either a DRAM device, a non-volatile memory device, or both simultaneously.

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