Discontinuous dielectric interface for bipolar transistors

Details Discontinuous dielectric interface for bipolar transistors Discontinuous dielectric interface for bipolar transistors

2005-09-06

2005-09-06

Kang, Donghee (Department: 2811)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S312000, C438S313000, C438S328000, C438S423000, C257S047000, C257S083000, C257S183000, C257S186000

Reexamination Certificate

active

06939771

ABSTRACT:
A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the two regions of semiconductor material, thereby controlling electrical resistance at the interface.

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U.S. Appl. No. 09/165,946, filed Oct. 02, 1998.

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