Discharging a wafer after a plasma process for dielectric deposi

Details Discharging a wafer after a plasma process for dielectric deposi Discharging a wafer after a plasma process for dielectric deposi

1996-10-25

2000-07-04

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427539, 427563, 427579, 438788, 438710, 216 67, B05D 314, B05D 304, H01L 213105

Patent

active

060835699

ABSTRACT:
A method and apparatus for neutralizing a wafer in a plasma reactor following a deposition process which charges the wafer and hinders removal of the wafer from the plasma reactor. The wafer is exposed to a plasma of a noble gas such as helium to energize the reaction zone. Then a sufficient amount of an inert electronegative gas such as oxygen to neutralize the wafer is introduced into the plasma reactor in the absence of RF power or other gases. The neutralized wafer is readily removed from the plasma chamber.

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