Discharge of conductive array lines in fast memory

Details Discharge of conductive array lines in fast memory Discharge of conductive array lines in fast memory

2006-03-28

2006-03-28

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000

Reexamination Certificate

active

07020006

ABSTRACT:
Circuitry that discharges conductive array lines is provided. Generally, the conductive array lines are simultaneously selected and apply an appropriate programming pulse. Accordingly, the conductive array lines need to be discharged in connection with a write operation. The discharge can occur either prior to or following a write operation.

REFERENCES:
patent: 3886577 (1975-05-01), Buckley
patent: 4839859 (1989-06-01), Moopenn et al.
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5933365 (1999-08-01), Klersy et al.
patent: 6088286 (2000-07-01), Yamauchi et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6385079 (2002-05-01), Tran
patent: 6456525 (2002-09-01), Perner et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6531371 (2003-03-01), Hsu et al.
patent: 6567297 (2003-05-01), Baker
patent: 6870755 (2005-03-01), Rinerson et al.
A. Beck, J. Bednorz, A. Bietsch, Ch. Gerber, C. Rossel, D. Widmer, “Reproducible switching effect in thin oxide films for memory applications,” Applied Physics Letters, vol. 77, No. 1, Jul. 3, 2000, pp. 139-141.
ISSI, “IS62LV1288BLL—128Kx8 Low Power and Low Vcc CMOS Static RAM,” Intergrated Silicon Solution, Inc, Rev A Aug. 10, 2002, pp 1-10.
Liu et al., “A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films,” Non-Volatile Memory Technology Symposium, Nov. 7, 2001, pp. 1-7.
Liu et al., “Electric-pulse-induced reversibile resistance change effect in magnetoresistive films,” Applied Physics Letters, vol. 76, No. 19, May 8, 2000, pp. 2749-2751.
Oxides and Oxide Films, vol. 6, edited by Ashok. K. Vijh, Chapter 4 by David Oxley, “Memory Effects in Oxide Films,” (Marcel Drekker 1981), pp. 251-325.
C. Rossel, G.I. Meijer, D. Brémaud, D. Widmer, “Electrical current distribution across a metal-insulator-metal structure during bistable switching,” Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, pp. 2892-2898.
J.G. Simmons and R.R. Verderber, “New Conduction and Reversible Memory Phenomena in Thin Insulating Films,” Proc. Roy. Soc. A., 301 (1967), pp. 77-102.
R.E. Thurstans and D.P. Oxley, “The Electroformed metal-insulator-metal structure: A comprehensive model,” J. Phys. D.: Appl. Phys. 35 (2002), Apr. 2, 2002, pp. 802-809.
Y. Watanabe, J.G. Bednorz, A. Bietsch, Ch. Gerber, D. Widmer, A. Beck, “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals,” Applied Physics Letters, vol. 78, No. 23, Jun. 4, 2001, pp. 3738-3740.

Affiliated with

Also associated with

Rating

Discharge of conductive array lines in fast memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Discharge of conductive array lines in fast memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Discharge of conductive array lines in fast memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3593518