Discharge electrode and process chamber of dry etching facility

Details Discharge electrode and process chamber of dry etching facility Discharge electrode and process chamber of dry etching facility

1999-09-22

2000-09-26

Beck, Shrive

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723E, 118728, C23C 1600, H05H 100

Patent

active

061238058

ABSTRACT:
A process chamber of a dry etching facility for manufacturing semiconductor devices uniformly forms the ion density of plasma over a wafer, and reduces the volume of the process chamber by installing a plurality of discharge openings in an electrode housing which supports the electrode plate of a lower electrode. The lower electrode is a discharge electrode which is constructed such that a plurality of discharge openings are symmetrically provided in the side wall of the electrode housing supporting the electrode plate on which a wafer is mounted, and the discharge openings form a discharge passage which is connected to a discharge pipe at a pipe connection opening.

REFERENCES:
patent: 5460684 (1995-10-01), Saeki et al.
patent: 5529657 (1996-06-01), Ishii
patent: 5605637 (1997-02-01), Shan et al.

Affiliated with

Also associated with

Rating

Discharge electrode and process chamber of dry etching facility does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Discharge electrode and process chamber of dry etching facility , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Discharge electrode and process chamber of dry etching facility will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2096659