Static information storage and retrieval – Read/write circuit – Accelerating charge or discharge
Patent
1988-04-19
1990-01-02
Gossage, Glenn A.
Static information storage and retrieval
Read/write circuit
Accelerating charge or discharge
3652256, 36523006, 3652335, G11C 700
Patent
active
048917931
ABSTRACT:
A semiconductor memory device in which the transition of the address signal is detected and the discharge of the lower word line is carried out in response to the detection signal. High speed and reliable discharge of the word line can be carried out, thereby implementing high speed and reliable reading and writing operation.
REFERENCES:
patent: 3942162 (1976-03-01), Buchanan
patent: 4168490 (1979-09-01), Stinehelfer
patent: 4366558 (1982-12-01), Homma et al.
patent: 4393473 (1983-07-01), Rufford
patent: 4520462 (1985-05-01), Yamada et al.
patent: 4730278 (1988-03-01), Koury, Jr. et al.
Gossage Glenn A.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Discharge circuit for a semiconductor memory including address t does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Discharge circuit for a semiconductor memory including address t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Discharge circuit for a semiconductor memory including address t will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1388084