Discharge circuit for a semiconductor memory including address t

Static information storage and retrieval – Read/write circuit – Accelerating charge or discharge

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Details

3652256, 36523006, 3652335, G11C 700

Patent

active

048917931

ABSTRACT:
A semiconductor memory device in which the transition of the address signal is detected and the discharge of the lower word line is carried out in response to the detection signal. High speed and reliable discharge of the word line can be carried out, thereby implementing high speed and reliable reading and writing operation.

REFERENCES:
patent: 3942162 (1976-03-01), Buchanan
patent: 4168490 (1979-09-01), Stinehelfer
patent: 4366558 (1982-12-01), Homma et al.
patent: 4393473 (1983-07-01), Rufford
patent: 4520462 (1985-05-01), Yamada et al.
patent: 4730278 (1988-03-01), Koury, Jr. et al.

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