Directional ion etching process for patterning self-aligned...

Details Directional ion etching process for patterning self-aligned... Directional ion etching process for patterning self-aligned...

2006-05-09

2006-05-09

Blum, David (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07041598

ABSTRACT:
The invention provides a directional ion etching process to pattern self-aligned via contacts in the manufacture of semiconductor devices such as high density magnetic random access memory (MRAM). In a particular embodiment, a semiconductor wafer is prepared with vertically arranged layers, including a patterned layer in electrical contact with a conductive row layer. The patterned layer may be a magnetic tunnel junction layer. A photoresist is deposited on the junction layer, masked, exposed and developed. The non-protected junction layer is etched to provide appropriate junction stacks. The remaining photoresist caps are not dissolved, rather they and the surface of the wafer are coated with a dielectric. Directional ion etching at a low angle relative to the junction stack layer removes the coated photoresist caps and thereby provides at least one patterned self-aligned via contact.

REFERENCES:
patent: 4182636 (1980-01-01), Dennard et al.
patent: 5106461 (1992-04-01), Volfson et al.
patent: 5512514 (1996-04-01), Lee
patent: 6309957 (2001-10-01), Tu et al.
patent: 6391658 (2002-05-01), Gates et al.
patent: 6498092 (2002-12-01), Lee et al.

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