Directional aperture etched in silicon

Details Directional aperture etched in silicon Directional aperture etched in silicon

1988-02-05

1989-02-28

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156647, 156654, 156657, 156662, C23F 100

Patent

active

048082600

ABSTRACT:
A method for anisotropically etching an aperture into a monocrystaline substrate such that the angle of the aperture plane with respect to the nominal crystaline planes of the substrate may be preselected. Etchant pits through opposing planar surfaces are offset from one another by a preselected longitudinal offset trigonometrically related to the desired aperture angle. Other selected parameters trigonometrically related to the aperture plane include: the intersecting angle of the intersecting crystaline planes with the nominal crystaline planes; substrate thickness; and depth of each of the etchant pits.

REFERENCES:
patent: 3977071 (1976-08-01), Jarman
patent: 4169008 (1979-09-01), Kurth
patent: 4269653 (1981-05-01), Wada et al.
patent: 4514896 (1985-05-01), Dixon et al.
patent: 4628576 (1986-12-01), Giachino et al.
patent: 4647013 (1987-03-01), Giachino et al.
patent: 4733823 (1988-03-01), Waggener et al.
patent: 4758368 (1988-07-01), Thompson
patent: 4765864 (1988-08-01), Holland et al.
IBM Tech. Dis. Bulletin, "High Density Josephson Board Tech. Using Two-Sided Etching", vol. 22, No. 12, 1980, pp. 5558-5560.
IEEE Transactions on Elect. Devices, "Fabrication of Novel . . . (100) and (110) Silicon", vol. ED-25, No. 10, 10/78.
IBM Technical Disclosure Bulletin, vol. 14, No. 2, Jul. 1971, pp. 417-418, "Fabricating Shaped Grid and Aperture Holes".

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