Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2005-09-12
2011-11-08
Kunemund, Bob M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S084000, C117S085000, C117S086000, C117S087000
Reexamination Certificate
active
08052794
ABSTRACT:
A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.
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O'Loughlin Michael John
Paisley Michael James
Sumakeris Joseph John
Kunemund Bob M
Moore & Van Allen PLLC
Philips Steven B.
Rao G. Nagesh
The United States of America as represented by the Secretary of
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