Direct vapor delivery of enabling chemical for enhanced HF etch

Details Direct vapor delivery of enabling chemical for enhanced HF etch Direct vapor delivery of enabling chemical for enhanced HF etch

1997-03-26

2000-05-23

Utech, Benjamin L.

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

216 73, 216 80, B08B 600, H01L 21302, B44C 122

Patent

active

060654813

ABSTRACT:
Apparatus and method for direct delivery of enabling chemical gas from a liquid source and of HF gas in a hydrogen fluoride/enabling chemical based cleaning or etching process, such as a silicon dioxide film etching process. The liquid enabling chemical is temperature controlled to generate a vapor pressure which is sufficient to operate a mass flow controller at a desired processing pressure without a carrier gas. Prior to entering the process chamber, the enabling chemical gas is pre-mixed with HF and optionally, a carrier gas, all of which are supplied at flow rates independent of each other. By controlling the vapor pressure of the solvent in this way, solvent/HF/carrier mixtures which are not physically possible with carrier gas systems are attainable allowing access to a larger process space.

REFERENCES:
patent: 3829068 (1974-08-01), Hohne
patent: 4235829 (1980-11-01), Partus
patent: 4605479 (1986-08-01), Faith, Jr.
patent: 4749440 (1988-06-01), Blackwood
patent: 5022961 (1991-06-01), Izumi
patent: 5023206 (1991-06-01), Freeman
patent: 5094701 (1992-03-01), Norman et al.
patent: 5112437 (1992-05-01), Watanabe et al.
patent: 5213621 (1993-05-01), Ivankovits et al.
patent: 5213622 (1993-05-01), Bohling et al.
patent: 5221366 (1993-06-01), Roberts et al.
patent: 5234540 (1993-08-01), Grant et al.
patent: 5332444 (1994-07-01), Goerge et al.
patent: 5336356 (1994-08-01), Ban et al.
patent: 5368687 (1994-11-01), Sandhu et al.
patent: 5439553 (1995-08-01), Grant
patent: 5455014 (1995-10-01), Costantino et al.
patent: 5571375 (1996-11-01), Izumi et al.
C. Elsmore et al., "Comparison of HCL Gas-Phase Cleaning with Conventional and Dilute Wet Chemistries", Electrochem. Soc. Proc. (1995) 142-149.
P.J. Holmes et al., "A Vapor Etching Technique for the Photolithography of Silicon Dioxide," Microelectronics and Reliability, (1966) 337-341.
K. D. Beyer et al., "Etching of SiO.sub.2 in Gaseous HF/H.sub.2 O," IBM Technical Bulletin, 19(7), (Dec. 1976), 2513.
A. Izumi et al., "A New Cleaning Method by Using Anhydrous HF/CH.sub.3 OH Vapor System," J. Ruzyllo et al., ed. Symposium on Cleaning Technology in Semiconductor Device Manufacturing, ECS Proceedings, 92(12), 260-266 (1992).
Robert P. Donovan et al., "Semiconductor Wafer Cleaning Technology", Austin, TX, Feb. 23-24, 1993.
J. Butterbaugh et al., "Gas Phase Etching of Silicon Oxide with Anhydrous HF and Isopropanol;", Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, ECS Proceedings, 94(7), 374-383 (1994).
M. Jun-Ru, "A New Conformal Dry-etch Technique for Submicron Structures," J. Vac. Sci. Technol., Nov./Dec. 1981, 1385-1389.
K.D. Beyer et al., "Silicon Surface Cleaning Process," IBM Technical Disclosure Bulletin, 20(5) (Oct. 1977), 1746-7.

Affiliated with

Also associated with

Rating

Direct vapor delivery of enabling chemical for enhanced HF etch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Direct vapor delivery of enabling chemical for enhanced HF etch , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Direct vapor delivery of enabling chemical for enhanced HF etch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1829877