Direct tunneling semiconductor memory device and fabrication...

Details Direct tunneling semiconductor memory device and fabrication... Direct tunneling semiconductor memory device and fabrication...

2007-10-30

2007-10-30

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000

Reexamination Certificate

active

11012277

ABSTRACT:
A direct-tunneling semiconductor memory device includes a device isolation structure formed on a semiconductor substrate, including a device isolation trench and a device isolation insulation film filling the device isolation trench, a dielectric film covering both sidewall surfaces and a top surface of a floating gate electrode formed on the semiconductor substrate, a conductive part provided on the sidewall surfaces of the floating gate electrode via the dielectric film, the conductor part constituting a part of a control gate electrode, and first and second diffusion regions formed at respective lateral sides of the floating gate electrode, wherein the first and second diffusion regions are formed on a surface of the device isolation groove with offset from a region right underneath the floating gate electrode, the conductive part is formed in the device region with offset from the device isolation trench.

REFERENCES:
patent: 6195292 (2001-02-01), Usuki et al.
patent: 6713826 (2004-03-01), Uehara et al.
patent: 11-103052 (1999-04-01), None
patent: 2000-150680 (2000-05-01), None
patent: 2002-16155 (2002-01-01), None
patent: 2002-231824 (2002-08-01), None
patent: 2004-273643 (2004-09-01), None
Tatsuya Usuki et al., “Advantage of a Quasi-Nonvolatile Memory with Ultra Thin Oxide”, Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, Tokyo, 2001, pp. 532-533.

Affiliated with

Also associated with

Rating

Direct tunneling semiconductor memory device and fabrication... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Direct tunneling semiconductor memory device and fabrication..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Direct tunneling semiconductor memory device and fabrication... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3901922