Direct tunneling memory with separated transistor and tunnel...

Details Direct tunneling memory with separated transistor and tunnel... Direct tunneling memory with separated transistor and tunnel...

2007-10-30

2007-10-30

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000

Reexamination Certificate

active

11037176

ABSTRACT:
A semiconductor device has: an isolation region formed on a semiconductor substrate and defining a continuous active region including a select transistor region and a direct tunnel element region; a gate insulating film formed on a channel region of the select transistor region; a tunnel insulating film formed on a partial area of the direct tunnel element region and having a thickness different from a thickness of the gate insulating film; a continuous floating gate electrode formed above the gate insulating film and the tunnel insulating film; an inter-electrode insulating film formed on a surface of the floating gate electrode; a control gate electrode facing the floating gate electrode via the inter-electrode insulating film; and a pair of source/drain regions formed on both sides of the channel region of the select transistor region and not overlapping the tunnel insulating film.

REFERENCES:
patent: 6195292 (2001-02-01), Usuki et al.
patent: 7208795 (2007-04-01), Carver et al.
patent: 2000-150680 (2000-05-01), None
Tatsuya Usuki et al., “Advantage of a Quasi-Nonvolatile Memory with Ultra Thin Oxide”, Extended Abstract of the 2001 International Conference on Solid State Devices and Material, Tokyo, 2001., pp. 532-533.

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