Direct stacked and flip chip power semiconductor device structur

Details Direct stacked and flip chip power semiconductor device structur Direct stacked and flip chip power semiconductor device structur

1994-10-03

1996-07-02

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

257723, 257712, 257778, 361601, 361705, 361713, 361735, H01L 2302, H01L 2348, H05K 720

Patent

active

055325122

ABSTRACT:
Power semiconductor device structures and assemblies with improved heat dissipation characteristics and low impedance interconnections include a thermally-conductive dielectric layer, such as diamondlike carbon (DLC) overlying at least portions of the active major surface of a semiconductor chip, with vias formed in the dielectric layer in alignment with contact pads on the active major surface. A patterned metallization layer is formed over the thermally-conductive dielectric layer, with portions of the metallization layer extending through the vias into electrical contact with the chip contact pads. A metal structure is electrically and thermally coupled to selected areas of the patterned metallization, such as by solder bonding or by a eutectic bonding process. In different embodiments, the metal structure may comprise a metal conductor bonded to the opposite major surface of another power semiconductor device structure, a heat-dissipating device-mounting structure, or simply a low-impedance lead.

REFERENCES:
patent: 5019946 (1991-05-01), Eichelberger et al.
patent: 5200810 (1993-04-01), Wojnarowski et al.
Natarajan et al., "Diamondlike carbon films: Optical absorption, dielectric properties, and hardness dependence on deposition parameters", J. Vac. Sci. Technol. A3(3), May/Jun. 1985, pp. 681-685.
Davidson et al., "Multilevel DLC (Diamondlike Carbon) capacitor structure", SPIE, vol. 871, Space Structures, Power, and Power Conditioning (1988), pp. 308-312.

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