Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-06-06
2006-06-06
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C502S150000, C502S232000
Reexamination Certificate
active
07056840
ABSTRACT:
A low dielectric constant, patterned, nanoporous material and a method of forming the material. The material is formed by depositing a layer onto a substrate, said layer comprising a reactive organosilicate material, a porogen, an initiator, and a solvent; exposing portions of the layer to energy (e.g., thermal energy or electromagnetic radiation) to change the solubility of portions of the organosilicate material with respect to the solvent; selectively removing more soluble portions of the layer to generate a relief pattern; and decomposing the porogen to thereby generate a nanoporous organosilicate layer.
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Connor Eric
Kim Ho-Cheol
Lee Victor Yee-Way
Miller Robert Dennis
Volksen Willi
Fourson George
Goldman Richard M.
International Business Machines Corp.
Johnson Daniel
Toledo Fernando L.
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