Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2006-04-18
2006-04-18
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S189020, C365S230020
Reexamination Certificate
active
07031211
ABSTRACT:
A direct memory access interface incorporates setting bit line selection data into a particular storage element of a desired page register element. The selection data and an access enable signal activate a memory access gate to electrically couple a memory access line with a desired memory bit line. Individual bit lines are selectable independently and more than one page register element may be selected at a time. Direct access of a memory bit line allows measurement and characterization operations to be carried out electrically with selected memory cells. This direct electrical access allows instrumentation to make voltage and current measurements necessary for characterization operations. Area that would otherwise be incorporated for an address decoder gate at each bit line selector circuit is saved since no on-chip decoding scheme is necessary. Additional area savings are realized since selection data storage are within a bidirectional storage element already present in a page register element.
REFERENCES:
patent: 6002623 (1999-12-01), Stave et al.
patent: 6233191 (2001-05-01), Gould et al.
patent: 6864738 (2005-03-01), Du et al.
Adusumilli Vijaya P.
Telecco Nicola
Atmel Corporation
Schneck Thomas
Schneck & Schneck
Tran Andrew Q.
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