Direct imprinting of etch barriers using step and flash...

Details Direct imprinting of etch barriers using step and flash... Direct imprinting of etch barriers using step and flash...

2007-01-16

2007-01-16

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S641000, C438S654000

Reexamination Certificate

active

10995800

ABSTRACT:
A direct imprinting process for Step and Flash Imprint Lithography includes providing (40) a substrate (12); forming (44) an etch barrier layer (14) on the substrate; patterning (46) the etch barrier layer with a template (16) while curing with ultraviolet light through the template, resulting in a patterned etch barrier layer and a residual layer (20) on the substrate; and performing (48) an etch to substantially remove the residual layer. Optionally, a patterning layer (52) may be formed on the substrate (12) prior to forming the etch barrier layer (14). Additionally, an adhesive layer (13) may be applied (42) between the substrate (12) and the etch barrier layer (14).

REFERENCES:
patent: 6334960 (2002-01-01), Wilson et al.
patent: 6387787 (2002-05-01), Mancini et al.
patent: 6576374 (2003-06-01), Kim
patent: 2003/0142486 (2003-07-01), Arakawa et al.
patent: 2004/0224261 (2004-11-01), Resnick et al.
S.C. Johnson et al., “Advanced in Step and Flash Imprint Lithography”, Proceedings of SPIE, vol. 5037 (2003) pp. 197-202.
Matthew Colburn, et al., “Step and Flash Imprint Lithography for sub-100nm Patterning,” Proceedings of SPIE, vol. 3997, pp. 453-457.

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