Direct flow crystal growth system

Details Direct flow crystal growth system Direct flow crystal growth system

1989-10-30

1992-06-16

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

422245, 23302R, 156624, 156DIG71, 156DIG81, 156DIG63, C30B 708

Patent

active

051222248

ABSTRACT:
A crystal is grown in a constantly filtered solution which is flowed directly into the growing face of a crystal. In a continuous flow system, solution at its saturation temperature is removed from a crystal growth tank, heated above its saturation temperature, filtered, cooled back to its saturation temperature, and returned to the tank.

REFERENCES:
patent: 2562325 (1951-07-01), Merritt
patent: 2615797 (1952-10-01), Bruzau
patent: 3498759 (1970-03-01), Kralik
patent: 3560168 (1971-02-01), Stanton
patent: 3666410 (1972-05-01), Aoyama et al.
Pamplin Crystal Growth second edition, Pergamon Press, New York, 1980 pp. 406-407.
Loiacono et al., "Growth of KH.sub.2 PO.sub.4 Crystals at Constant Temperature and Supersaturation," Journal of Crystal Growth, vol. 62 (1983) pp. 545-556.
Bordui, "Growth of Large Single Crystals from Aqueous Solution: A Review," Journal of Crystal Growth, vol. 85 (1987) pp. 199-205.
Sasaki et al., "Influence of Bacteria in a Potassium Dihydrogen Phosphate Solution . . . ", Jap. Jour. of Applied Physics, vol. 26, No. 11, Nov. 1987, pp. L1767-L1769.

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