Direct bumping on integrated circuit contacts enabled by...

Details Direct bumping on integrated circuit contacts enabled by... Direct bumping on integrated circuit contacts enabled by...

2006-02-28

2006-02-28

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Configuration or pattern of bonds

C257S737000, C257S773000, C257S760000, C257S778000, C257S774000, C257S750000

Reexamination Certificate

active

07005752

ABSTRACT:
A semiconductor device including a contact pad and circuit metallization on the surface of an integrated circuit (IC) chip comprises a stack of protection layers over the surface of the chip. The stack consists of a first inorganic layer (303, preferably silicon nitride) on the chip surface, followed by a polymer layer (306, preferably benzocyclobutene) on the first inorganic layer (303), and finally an outermost second inorganic layer (310, preferably silicon dioxide) on the polymer layer (303). A window (301a) in the stack of layers exposes the metallization (301) of the IC. A patterned seed metal layer (307, preferably copper) is on the metallization (301) in the window and on the second inorganic layer (310) around the window. A buffer metal layer (308, preferably copper) is positioned on the seed metal layer (307). A metal reflow element (309) is attached to the buffer metal (308).

REFERENCES:
patent: 5736456 (1998-04-01), Akram
patent: 6166444 (2000-12-01), Hsuan et al.
patent: 6417089 (2002-07-01), Kim et al.
patent: 6620720 (2003-09-01), Moyer et al.
patent: 6782897 (2004-08-01), Wang et al.
patent: 2002/0043723 (2002-04-01), Shimizu et al.

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