Diodes for electrostatic discharge protection and voltage refere

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257357, 257369, 257373, H02L 2702

Patent

active

054263220

ABSTRACT:
A novel process is taught for forming diodes simulataneouly with the formation of typical prior art Ldd MOS devices. The diodes thus formed have low breakdown voltages, making them suitable for use as voltage reference diodes, or diodes for ESD protection.

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patent: 4875130 (1989-10-01), Huard
patent: 5254866 (1993-10-01), Ogoh
"Internal Chip ESD Phenomena Beyond the Protection Circuit", IEEE/IRPS 1988, pp. 19-25, C. Duvvury et al.
"New ESD Protection Concept for VLSI CMOS Circuits Avoiding Circuit Stress" 1991 EOS/ESD Symposium Proceedings, pp. 74-82, X. Guggenmos et al.

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