Diode with controlled breakdown

Details Diode with controlled breakdown Diode with controlled breakdown

1996-06-12

1999-09-21

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257603, 257605, H01L 2976

Patent

active

059557664

ABSTRACT:
A zapping diode concerned with a P-N junction diode provided in an integrated circuit, whose P-N junction is subjected to breakdown by an overvoltage to perform fine adjustment in the value of capacitance or resistance involved in the circuit. The diode has a first impurity region of a first conductivity type formed in a first conductivity type semiconductor region, a second impurity region, an interlayer insulation film formed over the semiconductor region, and a third conductor film formed on the semiconductor region between the first and second impurity region. The third conductor film, when applied by a reverse-bias voltage, controls the direction of breakdown in the P-N junction to thereby provide a consistent value of residual resistance.

REFERENCES:
patent: 3740689 (1973-06-01), Yamasjita
patent: 3767981 (1973-10-01), Polata
patent: 4713681 (1987-12-01), Beasom
patent: 5274259 (1993-12-01), Grabowski et al.
patent: 5382819 (1995-01-01), Honjo
patent: 5547303 (1996-08-01), Terashima et al.
Wolf "Silicon Processing V2", pp. 199, 274, 1990.

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