Diode protected semiconductor device

Details Diode protected semiconductor device Diode protected semiconductor device

1993-08-24

1995-03-21

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257259, H01L 2906, H01L 2978

Patent

active

053998936

ABSTRACT:
A diode protected semiconductor device appropriate for the output of a radio frequency amplifier, which can withstand substantial power reflection due to output impedance mismatch, is provided. The device may be implemented monolithically, in the form of a field effect transistor (FET) (14) having a back to back diode pair (17) connecting the drain (18) to the source (19). The FET comprises multiple transistor portions (28) coupled together. The diode pair comprises corresponding diode pair portions (37) coupled together. The configuration provides easy integration of the diode pair (17) into typical FET structures.

REFERENCES:
patent: 4498093 (1985-02-01), Allyn et al.
patent: 5046044 (1991-09-01), Houston et al.
M. Hagio et al., "Monlithic Integration of Surge Protection Diodes into Low-Noise GaAs MESFET's," IEEE Transactions on Electron Devices, vol. ED-32, No. 5, May 1985, pp. 892-895.

Affiliated with

Also associated with

Rating

Diode protected semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Diode protected semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diode protected semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1151048