Diode of semiconductor device and method for manufacturing the s

Details Diode of semiconductor device and method for manufacturing the s Diode of semiconductor device and method for manufacturing the s

1999-05-18

2000-12-12

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

With specified shape of pn junction

257654, H01L 310352

Patent

active

061603066

ABSTRACT:
A semiconductor diode device having the characteristic of soft recovery and a method for manufacturing the same. A first N+ layer contacts with a cathode electrode. An N- epitaxial layer is formed on the first N+ layer. A P- layer is formed to have an undulating junction with the N- epitaxial layer. A second N+ layer is embedded in the P- layer. An anode electrode is attached to the P- layer, wherein the anode contact to the P- layer includes the second N+ layer. A channel stop region and insulating layer are also added to the structure.

REFERENCES:
patent: 4071852 (1978-01-01), Kannam
patent: 4458260 (1984-07-01), McIntyre et al.
patent: 5432360 (1995-07-01), Kim et al.

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