Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-10-18
2005-10-18
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S173000, C257S209000, C257S655000
Reexamination Certificate
active
06956277
ABSTRACT:
System and method for providing an electrical fuse having a p-n junction diode. A preferred embodiment comprises a cathode, an anode, and one or more links formed between the cathode and the anode. The cathode and the portion of the cathode adjoining the link are doped with a first impurity, preferably a p-type impurity. The anode and the portion of the link adjoining the anode are doped with a second impurity, preferably an n-type impurity. The junction of the first impurity and the second impurity in the link forms a p-n junction diode. A conductive layer, such as a silicide layer, is formed over the p-n junction diodes. In an alternative embodiment, a plurality of p-n junction diodes may be formed in each link. One or more contacts may be formed to provide electrical contact to the cathode and the anode.
REFERENCES:
patent: 5708291 (1998-01-01), Bohr et al.
patent: 6323535 (2001-11-01), Iyer et al.
patent: 6580156 (2003-06-01), Ito et al.
Chen Shi-Bai
Wu Shien-Yang
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Vu Hung
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