Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2011-05-17
2011-05-17
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S173000, C365S158000, C365S175000
Reexamination Certificate
active
07944742
ABSTRACT:
A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
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Chen Yiran
Dimitrov Dimitar V.
Liu Hongyue
Wang Xiaobin
Wang Xuguang
Campbell Nelson Whipps LLC
Lam David
Seagate Technology LLC
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