Diode array and method of making thereof

Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state

Reexamination Certificate

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C257S530000, C257S050000, C257S390000, C257S209000, C257S142000

Reexamination Certificate

active

07846782

ABSTRACT:
A method of making a non-volatile memory device includes providing a substrate having a substrate surface, and forming a non-volatile memory array over the substrate surface. The non-volatile memory array includes an array of semiconductor diodes, and each semiconductor diode of the array of semiconductor diodes is disposed substantially parallel to the substrate surface.

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