Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-14
2006-03-14
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S357000, C257S360000, C438S200000, C438S201000
Reexamination Certificate
active
07012304
ABSTRACT:
An integrated circuit including a performance circuit occupying a first area of an integrated circuit substrate and a protection circuit coupled to the performance circuit and occupying a second area of an integrated circuit substrate separate from the first area. Also, a method of forming an integrated circuit including the steps of: Forming a performance circuit occupying a first area of an integrated circuit substrate, forming a protection circuit occupying a second area of an integrated circuit separate from the first area, and coupling the protection circuit to the performance circuit.
REFERENCES:
patent: 5159518 (1992-10-01), Roy
patent: 5426320 (1995-06-01), Zambrano
patent: 5440162 (1995-08-01), Worley et al.
patent: 5448100 (1995-09-01), Beasom
patent: 5477413 (1995-12-01), Watt
patent: 5500546 (1996-03-01), Marum et al.
patent: 5502317 (1996-03-01), Duvvury
patent: 5629544 (1997-05-01), Voldman et al.
patent: 5714784 (1998-02-01), Ker et al.
patent: 5796147 (1998-08-01), Ono
patent: 5869882 (1999-02-01), Chen et al.
patent: 6097066 (2000-08-01), Lee et al.
patent: 6218706 (2001-04-01), Waggoner et al.
patent: 6274908 (2001-08-01), Yamaguchi et al.
patent: 6365924 (2002-04-01), Wang et al.
Dabral Sanjay
Seshan Krishna
Blakely , Sokoloff, Taylor & Zafman LLP
Diaz José R.
Intel Corporation
Thomas Tom
LandOfFree
Diode and transistor design for high speed I/O does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Diode and transistor design for high speed I/O, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diode and transistor design for high speed I/O will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3606943