Diode and transistor design for high speed I/O

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S357000, C257S360000, C438S200000, C438S201000

Reexamination Certificate

active

07012304

ABSTRACT:
An integrated circuit including a performance circuit occupying a first area of an integrated circuit substrate and a protection circuit coupled to the performance circuit and occupying a second area of an integrated circuit substrate separate from the first area. Also, a method of forming an integrated circuit including the steps of: Forming a performance circuit occupying a first area of an integrated circuit substrate, forming a protection circuit occupying a second area of an integrated circuit separate from the first area, and coupling the protection circuit to the performance circuit.

REFERENCES:
patent: 5159518 (1992-10-01), Roy
patent: 5426320 (1995-06-01), Zambrano
patent: 5440162 (1995-08-01), Worley et al.
patent: 5448100 (1995-09-01), Beasom
patent: 5477413 (1995-12-01), Watt
patent: 5500546 (1996-03-01), Marum et al.
patent: 5502317 (1996-03-01), Duvvury
patent: 5629544 (1997-05-01), Voldman et al.
patent: 5714784 (1998-02-01), Ker et al.
patent: 5796147 (1998-08-01), Ono
patent: 5869882 (1999-02-01), Chen et al.
patent: 6097066 (2000-08-01), Lee et al.
patent: 6218706 (2001-04-01), Waggoner et al.
patent: 6274908 (2001-08-01), Yamaguchi et al.
patent: 6365924 (2002-04-01), Wang et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Diode and transistor design for high speed I/O does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Diode and transistor design for high speed I/O, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diode and transistor design for high speed I/O will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3606943

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.