Diode and transistor design for high speed I/O

Details Diode and transistor design for high speed I/O Diode and transistor design for high speed I/O

1998-06-30

2000-10-24

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257328, 257355, 257356, 257357, 257358, 257359, H01L 2362

Patent

active

061371432

ABSTRACT:
An integrated circuit including a performance circuit occupying a first area of an integrated circuit substrate and a protection circuit coupled to the performance circuit and occupying a second area of an integrated circuit substrate separate from the first area. Also, a method of forming an integrated circuit including the steps of: Forming a performance circuit occupying a first area of an integrated circuit substrate, forming a protection circuit occupying a second area of an integrated circuit separate from the first area, and coupling the protection circuit to the performance circuit.

REFERENCES:
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patent: 5449940 (1995-09-01), Hirata
patent: 5596216 (1997-01-01), Yanagigawa
patent: 5835986 (1998-11-01), Wei et al.
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patent: 5900664 (1999-05-01), En
patent: 5910677 (1999-06-01), Irino
patent: 5936282 (1999-08-01), Baba et al.
patent: 5962902 (1999-10-01), Kato et al.

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