Diode and semiconductor device having a controlled intrinsic or

Details Diode and semiconductor device having a controlled intrinsic or Diode and semiconductor device having a controlled intrinsic or

1994-11-28

1997-04-01

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257350, 257366, 257656, H01L 2976, H01L 2994, H01L 31075, H01L 31105

Patent

active

056169442

ABSTRACT:
A diode is provided comprising first and second semiconductor regions. The first semiconductor region is of one conductivity type and the second is of the opposite conductivity type. A third region is provided which is either an intrinsic semiconductor region or a low concentration region. The low concentration region has an impurity concentration lower than that of the first and second semiconductor layers. The third region is arranged to separate the first and second semiconductor regions. A control electrode region is provided over the third region through an insulative film.

REFERENCES:
patent: 4037140 (1977-07-01), Eaton
patent: 5140391 (1992-08-01), Hayashi et al.
Bogun et al "Tunable Oscillator Based on a PIN zinc-doped Silicon Diode" Sov. Phys. Semicond vol. 14, No. 6, Jun. 1980 pp. 724-726.

Affiliated with

Also associated with

Rating

Diode and semiconductor device having a controlled intrinsic or does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Diode and semiconductor device having a controlled intrinsic or , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diode and semiconductor device having a controlled intrinsic or will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-541649