Diode

Details Diode Diode

2006-03-14

2006-03-14

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S603000

Reexamination Certificate

active

07012308

ABSTRACT:
A diode which eliminates generation of local avalanche breakdown phenomenon when static surges in the backward direction are applied and withstands electrostatic breakdown. A P-type impurity diffused region of high concentration as an anode and an N-type impurity diffused region of high concentration as a cathode that surrounds the P-type impurity diffused region, are formed on the surface of an N-type silicon well region. The surface of the N-type silicon well region on which the impurity diffused regions are formed is covered with an interlayer dielectric, and a metal interconnect layer is formed thereon, to spread to the border line of the N-type impurity diffused region and is electrically connected to the P-type impurity diffused region. Accordingly, a P-type inversion layer IP is uniformly formed in a separation area between the impurity diffused regions when static surges in the backward direction are applied, preventing local avalanche breakdown.

REFERENCES:
patent: 5637901 (1997-06-01), Beigel et al.
patent: 8-316421 (1996-11-01), None
S. Voldman et al., “ Dynamic Threshold Body-and Gate-Coupled SOI ESD Protection Networks,” EOS/ESD Sympostium 97-210, pp. 3A.2.1-3A2.11.

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