Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2011-08-23
2011-08-23
Chen, Jack (Department: 2893)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S003000, C438S931000, C977S762000, C257SE43001
Reexamination Certificate
active
08003497
ABSTRACT:
A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga1-xMnxN (x=0.07) were synthesized. The nanowires, which have diameters of ˜10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.
REFERENCES:
patent: 6130143 (2000-10-01), Westwater et al.
patent: 6176925 (2001-01-01), Solomon et al.
patent: 6586095 (2003-07-01), Wang et al.
patent: 7575631 (2009-08-01), Byeun et al.
patent: 2002/0130311 (2002-09-01), Lieber et al.
patent: 2002/0172820 (2002-11-01), Majumdar et al.
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2003/0010971 (2003-01-01), Zhang et al.
patent: 2003/0039602 (2003-02-01), Sharma et al.
Stach, E.A.; Pauzauskie, P.J.; Kuykendall, T.; Goldberger, J.; He, R.; Yang, P. “Watching GaN nanowires grow”, Nano Letters, vol. 3, No. 6, pp. 867-869 (2003).
Zhang, J.; Zhang, L. “Growth of semiconductor gallium nitride nanowires with different catalysts”, J. Vac. Sci. Technol. B. vol. 21, No. 6, pp. 2415-2419 (2003).
Kuykendall, T. et al.—“Metalorganic Chemical Vapor Deposition Rout to GaN Nanowires with Triangular Cross Sections”—Nano Letters, vol. 3, No. 8, 2003, pp. 1063-1066.
Zhong, Z. et al.—“Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices”—Nano Letters, vol. 3, No. 3, 2003, pp. 343-346.
Deepak, F.L. et al.—“Photoluminescence spectra and ferromagnetic properties of GaMnN nanowires”—Chemical Physical Letters 374, 2003, pp. 314-318.
Choi Heonjin
He Rongrui
Kuykendal Tevye
Lee Sangkwon
Pauzauskie Peter
Chen Jack
O'Banion John P.
The Regents of the University of California
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