Diluted magnetic semiconductor nanowires exhibiting...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

Reexamination Certificate

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C438S003000, C438S931000, C977S762000, C257SE43001

Reexamination Certificate

active

08003497

ABSTRACT:
A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga1-xMnxN (x=0.07) were synthesized. The nanowires, which have diameters of ˜10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

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