Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-12
2007-06-12
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000
Reexamination Certificate
active
10479521
ABSTRACT:
A digital magnetic memory cell device for read and/or write operation includes a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system formed as an AAF system. The AAF system includes an AAF layer composite and at least one reference layer. The reference layer system includes at least one ferromagnetic layer arranged adjacent to a magnetic layer of the AAF layer composite in which the thickness of the antiferromagnetic layer is dimensioned to have a uniaxial anisotropy.
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Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Menz Douglas M.
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