Digital magnetic memory cell device

Details Digital magnetic memory cell device Digital magnetic memory cell device

2006-05-30

2006-05-30

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S303000, C257S306000, C257S324000, C257S421000, C438S003000, C438S240000

Reexamination Certificate

active

07053428

ABSTRACT:
A digital magnetic memory cell device for read and/or write operations includes a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system formed as an AAF system. The device includes an AAF layer composite and at least one reference layer. The AAF layer composite has two magnetic layers, and the reference layer system includes at least one antiferromagnetic layer arranged adjacent to a magnetic layer of the AAF layer composite. The magnetic layer is remote from the antiferromagnetic layer and has a uniaxial anisotropy pointing in a first direction. The magnetization of the antiferromagnetic layer is oriented in a second direction. The anisotropy direction of the magnetic layer and the magnetization direction of the antiferromagnetic layer are at an angle with respect to one another.

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