Diffusionless conductor/oxide semiconductor field effect transis

Details Diffusionless conductor/oxide semiconductor field effect transis Diffusionless conductor/oxide semiconductor field effect transis

1991-11-01

1992-11-10

Wojciechowicz, Edward J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, 257366, H01L 2701

Patent

active

051628791

ABSTRACT:
A diffusionless field effect transistor is formed at a face of a semiconductor layer (12) of a first conductivity type and includes a source conductor (36), a drain conductor (38) and a channel region (44). Source conductor (36) and drain conductor (38) are disposed to create inversion regions, and a second conductivity type opposite said first conductivity type, in the underlying source inversion region (40) and drain inversion region (42) of semiconductor layer (12) upon application of voltage. The transistor has a gate (54) insulatively overlying the channel region (44) to control the conductivity thereof.

REFERENCES:
patent: 3902186 (1975-08-01), Engeler et al.

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