Coating apparatus – Gas or vapor deposition – Multizone chamber
Reexamination Certificate
2004-08-06
2008-11-18
Zervigon, Rudy (Department: 1792)
Coating apparatus
Gas or vapor deposition
Multizone chamber
C118S715000, C156S345310, C156S345330, C156S345370
Reexamination Certificate
active
07452423
ABSTRACT:
Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber.
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Choi Byoung-lyong
Kim Jun-young
Lee Eun-kyung
Buchanan & Ingersoll & Rooney PC
Samsung Electronics Co,. Ltd.
Zervigon Rudy
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