Diffusion resistor having single event resistance used in semico

Details Diffusion resistor having single event resistance used in semico Diffusion resistor having single event resistance used in semico

1992-06-22

1993-11-09

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257536, 338 22R, H01L 2702, H01C 710

Patent

active

052605957

ABSTRACT:
A diffusion resistor comprises a diffusion resistor region formed in a semiconductor layer of a first conductivity type. The diffusion resistor region is formed of a first impurity diffusion region of a second conductivity type opposite to the first conductivity type. A second impurity diffusion region of the second conductivity type is formed in the semiconductor layer separated from the first impurity diffusion region and to surround a side of the first impurity diffusion region. The second impurity diffusion region is connected to a high voltage or a low voltage.

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