Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Patent
1997-02-28
1999-08-10
Brown, Peter Toby
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
438398, H01L 2120, H01L 21225
Patent
active
059373148
ABSTRACT:
Methods of forming a roughened surface through diffusion-enhanced crystallization of an amorphous material are disclosed. In one aspect, conductive hemispherical grain silicon can be formed through dopant diffusion-enhanced crystallization of one or more layers of amorphous silicon. To further enhance uniformity in the formation of the hemispherical grain silicon, the exposed surface of the amorphous silicon can be seeded before crystallization to further enhance uniformity of the surface structures formed in the hemispherical grain silicon.
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Ping Er-Xuan
Thakur Randhir
Brown Peter Toby
Guerrero Maria
Micro)n Technology, Inc.
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