Diffusion-enhanced crystallization of amorphous materials to...

Details Diffusion-enhanced crystallization of amorphous materials to... Diffusion-enhanced crystallization of amorphous materials to...

2007-07-03

2007-07-03

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C427S397700, C427S097600

Reexamination Certificate

active

11158746

ABSTRACT:
Methods of forming a roughened surface through diffusion-enhanced crystallization of an amorphous material are disclosed. In one aspect, conductive hemispherical grain silicon can be formed through dopant diffusion-enhanced crystallization of one or more layers of amorphous silicon. To further enhance uniformity in the formation of the hemispherical grain silicon, the exposed surface of the amorphous silicon can be seeded before crystallization to further enhance uniformity of the surface structures formed in the hemispherical grain silicon.

REFERENCES:
patent: 4904611 (1990-02-01), Chiang et al.
patent: 5130885 (1992-07-01), Fazan et al.
patent: 5134086 (1992-07-01), Ahn
patent: 5149676 (1992-09-01), Kim et al.
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5202278 (1993-04-01), Mathews et al.
patent: 5208479 (1993-05-01), Mathews et al.
patent: 5242507 (1993-09-01), Iverson
patent: 5242855 (1993-09-01), Oguro
patent: 5266514 (1993-11-01), Tuan et al.
patent: 5278091 (1994-01-01), Fazan et al.
patent: 5290729 (1994-03-01), Hayashide et al.
patent: 5318920 (1994-06-01), Hayashide
patent: 5324679 (1994-06-01), Kim et al.
patent: 5340763 (1994-08-01), Dennison
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5342800 (1994-08-01), Jun
patent: 5350707 (1994-09-01), Ko et al.
patent: 5366917 (1994-11-01), Watanabe et al.
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5407534 (1995-04-01), Thakur
patent: 5418180 (1995-05-01), Brown
patent: 5444013 (1995-08-01), Akram et al.
patent: 5550070 (1996-08-01), Funai et al.
patent: 5573968 (1996-11-01), Park
patent: 5583070 (1996-12-01), Liao et al.
patent: 5597756 (1997-01-01), Fazan et al.
patent: 5608247 (1997-03-01), Brown
patent: 5612558 (1997-03-01), Harshfield
patent: 5619057 (1997-04-01), Komatsu
patent: 5629223 (1997-05-01), Thakur
patent: 5634974 (1997-06-01), Weimer et al.
patent: 5639685 (1997-06-01), Zahurak et al.
patent: 5639689 (1997-06-01), Woo
patent: 5656531 (1997-08-01), Thakur et al.
patent: 5658381 (1997-08-01), Thakur et al.
patent: 5700710 (1997-12-01), Zenke
patent: 5714415 (1998-02-01), Oguro
patent: 5721171 (1998-02-01), Ping et al.
patent: 5770500 (1998-06-01), Batra et al.
patent: 5837580 (1998-11-01), Thakur et al.
patent: 5856007 (1999-01-01), Sharan et al.
patent: 5858852 (1999-01-01), Aiso
patent: 5882979 (1999-03-01), Ping et al.
patent: 5888295 (1999-03-01), Sandhu et al.
patent: 5913119 (1999-06-01), Lin et al.
patent: 5937314 (1999-08-01), Ping et al.
patent: 6037219 (2000-03-01), Lin et al.
patent: 6046083 (2000-04-01), Lin et al.
patent: 6069053 (2000-05-01), Ping et al.
patent: 6077573 (2000-06-01), Kim et al.
patent: 6153466 (2000-11-01), Yew et al.
patent: 6255159 (2001-07-01), Thakur
patent: 6291850 (2001-09-01), Choi et al.
patent: 6350648 (2002-02-01), Ping et al.
patent: 6385020 (2002-05-01), Shin et al.
patent: 6458652 (2002-10-01), Chen et al.
patent: 6509227 (2003-01-01), Ping et al.
patent: 6511892 (2003-01-01), Ping et al.
patent: 6573552 (2003-06-01), Thakur
patent: 6693007 (2004-02-01), Chen et al.
patent: 6723613 (2004-04-01), Huang
patent: 6756265 (2004-06-01), Chen et al.
patent: 6930015 (2005-08-01), Ping et al.
patent: 6949427 (2005-09-01), Chen et al.
patent: 7023039 (2006-04-01), Chen et al.
patent: 2001/0031554 (2001-10-01), Yamamoto
patent: 2003/0129807 (2003-07-01), Ping et al.
patent: 2004/0183073 (2004-09-01), Gu
patent: 2005/0239263 (2005-10-01), Ping et al.
patent: 2313231 (1997-11-01), None
patent: 4280669 (1992-10-01), None
patent: 5315543 (1993-11-01), None
patent: 09298284 (1997-11-01), None
patent: 2002017788 (2000-08-01), None
Jun et al., “The Fabrication and Electrical Properties of Modulated Stacked Capacitor for Advanced DRAM Applications,”IEEE- Electron Device Letters, 1992;13(8):430-432.
Mine et al., “Capacitance-Enhanced Stacked-Capacitor with Engraved Storage Electrode for Deep Submicron DRAMS,” Extended Abstracts of the 21stConference on Solid State Devices and Materials, Tokyo, Japan, 1989: 137-140.
H. Pierson, “Chemical Vapor Deposition,”Handbook of Chemical Vapor Deposition(CVD), 1992, Noyes Publications, Park Ridge, NJ:184.
Sakai et al., “Crystallization of Amorphous Silicon with Clean Surfaces,”Japanese Journal of Applied Physics, Jun. 1991;30(6A):L941-L943.
Shinriki et al., “Leakage Current Reduction and Reliability Improvement of Effective 3nm-Thick CVD Ta2O5Film by Two-Step Annealing,” 1989 Symposium on VLSI Technology, Digest of Technical Papers, Kyoto, 25-26 (May 22-25, 1989).
Watanabe et al., “Hemispherical Grain Silicon for High Density DRAMS,”Solid State Technology, Jul. 1992:29-33.
Watanabe et al., “Hemispherical Grained Si Formation on in-situ Phosphorus Doped Amorphous-Si Electrode for 256Mb DRAM's Capacitor,”IEEE Transactions on Electron Devices, Jul. 1995,42(7): 1247-1253.
Watanabe et al., “A New Cylindrical Capacitor Using Hemispherical Grained Si (HSG-Si) for 256 Mb DRAMs,”IEEE IEDM, 1992;259-262.
Watanabe,“Device application and structure observation for hemispherical-grained Si,”J Appl. Phys., Apr. 1, 1992;71(7):3538-3543.
Watanabe et al., “Hemispherical Grained Silicon (HSG-Si) Formation on In-situ Phosphorous Doped Amorphous-Si Using the Seeding Method,”Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, 1992: 422-424.
Watanabe et al., “A New Cylindrical Capacitor Using Hemispherical Grained SI (HSG-Si) for 256 Mb DRAMs,”IEEE: 10.1.1-10.1.4.
Uemoto et al., “A High-Performance Stacked-CMOS SRAM Cell by Solid Phase Growth Technique,” 1990 Symposium on VLSI Technology,IEEE, 1990:21-22.

Affiliated with

Also associated with

Rating

Diffusion-enhanced crystallization of amorphous materials to... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Diffusion-enhanced crystallization of amorphous materials to..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diffusion-enhanced crystallization of amorphous materials to... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3749559