Diffusion bias control for improving sensitivity of CMOS...

Details Diffusion bias control for improving sensitivity of CMOS... Diffusion bias control for improving sensitivity of CMOS...

2007-11-06

2007-11-06

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000

Reexamination Certificate

active

11067039

ABSTRACT:
In CMOS active pixels there are reverse biased non-photo-detector N type diffusions that attract carriers. These carriers, if not collected by the photo-detector, are effectively lost, and thus the overall sensitivity of the pixel is reduced. This invention provides a method to minimize the bias on non-photo-detector diffusions to minimize the number of wasted carriers and thus improve sensitivity.

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