Diffusion barrier trilayer for minimizing reaction between metal

Details Diffusion barrier trilayer for minimizing reaction between metal Diffusion barrier trilayer for minimizing reaction between metal

1996-07-23

1997-09-16

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257915, 438653, H01L 2144, H01L 2943

Patent

active

056684118

ABSTRACT:
A diffusion barrier trilayer 42 is comprised of a bottom layer 44, a seed layer 46 and a top layer 48. The diffusion barrier trilayer 42 prevents reaction of metallization layer 26 with the top layer 48 upon heat treatment, resulting in improved sheet resistance and device speed.

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