Diffusion barrier for thin film hybrid circuits

Details Diffusion barrier for thin film hybrid circuits Diffusion barrier for thin film hybrid circuits

1989-11-13

1991-08-20

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29620, 156656, 1566591, 156664, 156901, 252 795, 338308, 427103, 437190, 437192, B44C 122, C23F 102

Patent

active

050411918

ABSTRACT:
A thin film resistor and method of making employs tungsten or tungsten titanium alloy as an alectrically conductive diffusion barrier between the nickel chromium resistor and the gold conductor. A solution of cupric sulfate, ammonium hydroxide, glycerol and deionized water is used to remove the unwanted diffusion barrier without damaging the thin film resistor materials, thereby preserving precision resistance values.

REFERENCES:
patent: 3649945 (1972-03-01), Waits
patent: 4087314 (1978-05-01), George et al.
patent: 4495222 (1985-01-01), Anderson et al.
patent: 4507851 (1985-04-01), Joyner et al.
patent: 4882293 (1989-11-01), Neumann et al.
patent: 4923827 (1990-05-01), Calviello et al.

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